2N6282
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N6282 is a high-power NPN Darlington bipolar junction transistor designed for demanding applications. This surface mount die offers a 60V collector-emitter breakdown voltage and can handle up to 20A of collector current, with a maximum power dissipation of 160W. Key performance characteristics include a minimum DC current gain (hFE) of 750 at 10A and 3V, and a Vce saturation of 3V at 200mA and 20A. The operating temperature range is -65°C to 200°C. This component is suitable for power switching and control circuits in industrial and automotive sectors. The 2N6282 is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Darlington |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 200mA, 20A |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 10A, 3V |
| Frequency - Transition | - |
| Supplier Device Package | Die |
| Current - Collector (Ic) (Max) | 20 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 160 W |
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