2N6277
NPN TRANSISTORManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N6277 is an NPN bipolar junction transistor designed for high-power switching and amplification applications. This through-hole component, packaged in a TO-3 (TO-204AA) case, offers a maximum collector emitter breakdown voltage of 150 V and a continuous collector current capability of 50 A. It dissipates up to 250 W of power and exhibits a minimum DC current gain (hFE) of 50 at 1 A collector current and 4 V collector emitter voltage. The saturation voltage (Vce Sat) is a maximum of 3V at 10A base current and 50A collector current. The collector cutoff current is specified at a maximum of 50 µA. Operating temperature ranges from -65°C to 200°C (TJ). This device is commonly utilized in industrial power control, audio amplification, and power supply circuits.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 10A, 50A |
| Current - Collector Cutoff (Max) | 50µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 1A, 4V |
| Frequency - Transition | - |
| Supplier Device Package | TO-3 |
| Current - Collector (Ic) (Max) | 50 A |
| Voltage - Collector Emitter Breakdown (Max) | 150 V |
| Power - Max | 250 W |
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