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2N6274

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2N6274

NPN TRANSISTOR

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology's 2N6274 is an NPN bipolar junction transistor (BJT) housed in a TO-3 (TO-204AA) package. This power transistor is rated for a collector-emitter breakdown voltage (Vce) of 100 V and can handle a continuous collector current (Ic) of up to 50 A. With a maximum power dissipation of 250 W, it is suitable for high-power switching and amplification applications. The device exhibits a minimum DC current gain (hFE) of 50 at 1 A collector current and 4 V Vce. Saturation voltage (Vce(sat)) is specified at 3 V for a base current of 10 A driving a 50 A collector current. This component finds use in power control, motor drive, and power supply circuits within industrial and automotive sectors. It operates across a junction temperature range of -65°C to 200°C.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-204AA, TO-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic3V @ 10A, 50A
Current - Collector Cutoff (Max)50µA
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 1A, 4V
Frequency - Transition-
Supplier Device PackageTO-3
Current - Collector (Ic) (Max)50 A
Voltage - Collector Emitter Breakdown (Max)100 V
Power - Max250 W

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