2N6273
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology's 2N6273 is a high-power PNP bipolar junction transistor (BJT) designed for robust performance in demanding applications. This component features a 100 V collector-emitter breakdown voltage and a substantial 30 A collector current (Ic) capability, enabling it to handle significant power dissipation up to 262 W. The transistor is housed in a TO-63 stud mount package, facilitating efficient thermal management through direct heat sinking. Its wide operating temperature range of -65°C to 200°C ensures reliability across various environmental conditions. The 2N6273 is well-suited for power switching, amplification, and regulation circuits found in industrial power supplies, motor control systems, and high-fidelity audio amplifiers.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-211MB, TO-63-4, Stud |
| Mounting Type | Stud Mount |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-63 |
| Current - Collector (Ic) (Max) | 30 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 262 W |
Request a Quote
Clients Also Buy
JAN2N5339U3
TRANS NPN 100V 5A U-3
JANSM2N3637
RH SMALL-SIGNAL BJT
JANSF2N2369AUBC/TR
RH SMALL-SIGNAL BJT
