2N6272
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology's 2N6272 is a high-power PNP bipolar junction transistor (BJT) designed for demanding applications. This component features a collector-emitter breakdown voltage (Vce) of 80 V and a maximum collector current (Ic) of 30 A, supported by a substantial power dissipation capability of 262 W. The 2N6272 is housed in a TO-63 stud mount package, facilitating robust thermal management in high-current scenarios. Its robust construction and performance characteristics make it suitable for use in power switching, amplification, and regulation circuits across various industrial and automotive sectors. The transistor type is PNP with a supplier device package of TO-63.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-211MB, TO-63-4, Stud |
| Mounting Type | Stud Mount |
| Transistor Type | PNP |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-63 |
| Current - Collector (Ic) (Max) | 30 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 262 W |
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