2N6271
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology's 2N6271 is an NPN bipolar junction transistor designed for high-power applications. This through-hole component, housed in a TO-204AD (TO-3) package, boasts a collector current capability of 30 A and a maximum power dissipation of 262 W. Featuring a collector-emitter breakdown voltage of 100 V, the 2N6271 is suitable for demanding power switching and amplification tasks. Its robust construction and operating temperature range of -65°C to 200°C make it a reliable choice for industrial control, power supplies, and automotive electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-204AD (TO-3) |
| Current - Collector (Ic) (Max) | 30 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 262 W |
Request a Quote
Clients Also Buy
JANSM2N3637
RH SMALL-SIGNAL BJT
JANSF2N2369AUBC/TR
RH SMALL-SIGNAL BJT
JANSM2N2907AUBC
RH SMALL-SIGNAL BJT
