2N6270
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology NPN Power Bipolar Junction Transistor (BJT), part number 2N6270. This robust component features a collector current capability of 10 A and a maximum power dissipation of 262 W. With a collector-emitter breakdown voltage of 80 V, it is suitable for high-power switching and amplification applications. The device is housed in a TO-204AD (TO-3) through-hole package, facilitating easy integration into demanding circuit designs. The operating temperature range is -65°C to 200°C (TJ). This component finds application in power supply regulation, motor control, and industrial automation systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-204AD (TO-3) |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 262 W |
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