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2N6248

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2N6248

POWER BJT

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology's 2N6248 is a high-power PNP bipolar junction transistor (BJT) packaged in a TO-204AD (TO-3) metal can for enhanced thermal dissipation. This through-hole component is rated for a maximum collector current of 15 A and a collector-emitter breakdown voltage of 100 V, with a power dissipation capability of 125 W. The 2N6248 exhibits a saturation voltage of 1.3 V at 500 µA base current and 5 mA collector current. Its wide operating temperature range of -65°C to 200°C makes it suitable for demanding applications in power switching, linear regulation, and audio amplification circuits across various industrial and high-reliability sectors.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-204AA, TO-3
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.3V @ 500µA, 5mA
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce-
Frequency - Transition-
Supplier Device PackageTO-204AD (TO-3)
Current - Collector (Ic) (Max)15 A
Voltage - Collector Emitter Breakdown (Max)100 V
Power - Max125 W

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