2N6235
TRANS NPN 300V 5A TO66Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N6235 is an NPN bipolar junction transistor (BJT) designed for high voltage and current applications. This component features a maximum collector-emitter breakdown voltage of 300V and a continuous collector current capability of 5A, with a power dissipation of up to 50W. The transistor exhibits a minimum DC current gain (hFE) of 25 at 1A and 5V, and a saturation voltage (Vce(sat)) of 2.5V at 1A collector current and 1A base current. The 2N6235 is housed in a TO-66 (TO-213AA) package, suitable for through-hole mounting. This robust device finds application in various industrial sectors requiring reliable power switching and amplification, including power supplies, motor controls, and general-purpose amplification circuits.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-213AA, TO-66-2 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | 2.5V @ 1A, 5A |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 1A, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-66 |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
| Power - Max | 50 W |