2N6215
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology's 2N6215 is a power bipolar junction transistor (BJT) with a PNP configuration. This device features a collector-emitter breakdown voltage (Vce) of 80 V and a maximum continuous collector current (Ic) of 2 A. Dissipating up to 35 W, the 2N6215 is designed for stud mounting in a TO-63 package. Its robust construction and electrical characteristics make it suitable for applications in power switching, voltage regulation, and audio amplification circuits across various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-211MB, TO-63-4, Stud |
| Mounting Type | Stud Mount |
| Transistor Type | PNP |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-63 |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 35 W |
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