2N6211P
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N6211P is a high-power, PNP bipolar junction transistor (BJT) designed for demanding applications. This device features a 225 V collector-emitter breakdown voltage (V(BR)CEO) and a continuous collector current (IC) capability of 2 A. With a maximum power dissipation of 3 W, it is suitable for power switching and amplification circuits. The DC current gain (hFE) is specified at a minimum of 30 at 1 A collector current and 5 V collector-emitter voltage. The saturation voltage (VCE(SAT)) is a maximum of 1.4 V at 125 mA base current and 1 A collector current. Packaged in a TO-66 (TO-213AA) through-hole configuration, the 2N6211P operates across a wide temperature range of -55°C to 200°C. This component finds utility in industrial power control, automotive electronics, and general-purpose power amplification.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-213AA, TO-66-2 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 200°C |
| Vce Saturation (Max) @ Ib, Ic | 1.4V @ 125mA, 1A |
| Current - Collector Cutoff (Max) | 5mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 1A, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-66 (TO-213AA) |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 225 V |
| Power - Max | 3 W |