2N6193QFN/TR
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology's 2N6193QFN-TR is a PNP bipolar junction transistor (BJT) designed for power applications. This through-hole device, housed in a TO-39 (TO-205AD) metal can package, offers a high collector-emitter breakdown voltage of 100 V and a maximum collector current of 5 A. With a power dissipation rating of 1 W, it is suitable for demanding environments, operating across a temperature range of -65°C to 200°C. Key specifications include a minimum DC current gain (hFE) of 60 at 2A and 2V, and a maximum Vce saturation of 1.2V at 500mA collector current. This component finds application in various industrial and commercial power switching and amplification circuits. The part is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C |
| Vce Saturation (Max) @ Ib, Ic | 1.2V @ 500mA, 5A |
| Current - Collector Cutoff (Max) | 100µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 2A, 2V |
| Frequency - Transition | - |
| Supplier Device Package | TO-39 (TO-205AD) |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 1 W |
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