2N6193QFN
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N6193QFN is a PNP bipolar junction transistor (BJT) designed for robust power applications. This component features a collector-emitter breakdown voltage of 100 V and a maximum collector current (Ic) of 5 A, with a power dissipation rating of 1 W. The minimum DC current gain (hFE) is specified at 60 at 2 A and 2 V. The transistor exhibits a Vce(sat) of 1.2 V at 500 mA and 5 A, and a collector cutoff current (Icbo) of 100 µA. Operating across a wide temperature range of -65°C to 200°C, the 2N6193QFN is housed in a TO-39 (TO-205AD) metal can package, suitable for through-hole mounting. This device finds application in power switching and amplification circuits within industrial and automotive sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C |
| Vce Saturation (Max) @ Ib, Ic | 1.2V @ 500mA, 5A |
| Current - Collector Cutoff (Max) | 100µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 2A, 2V |
| Frequency - Transition | - |
| Supplier Device Package | TO-39 (TO-205AD) |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 1 W |
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