2N6127
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N6127 is a high-power PNP bipolar junction transistor (BJT) designed for robust performance in demanding applications. This stud-mount device, housed in a TO-61 package (equivalent to TO-211MA, TO-210AC), offers a continuous collector current capability of 10 A and a maximum power dissipation of 117 W. With a collector-emitter breakdown voltage of 80 V, the 2N6127 is well-suited for power switching and amplification circuits. Its operating temperature range of -65°C to 200°C (TJ) ensures reliability in extreme environments. This component finds utility in industrial power supplies, automotive electronics, and general-purpose power amplification stages.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-211MA, TO-210AC, TO-61-4, Stud |
| Mounting Type | Stud Mount |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-61 |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 117 W |
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