2N6079
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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The Microchip Technology 2N6079 is a PNP bipolar junction transistor (BJT) designed for robust power applications. This through-hole component is housed in a TO-66 (TO-213AA) package, offering a maximum collector current of 7 A and a power dissipation capability of 45 W. It features a significant collector-emitter breakdown voltage of 350 V. The transistor exhibits a saturation voltage of 500 mV at an operating point of 200 µA base current and 1.2 mA collector current. Operating across a wide temperature range from -65°C to 200°C (TJ), the 2N6079 is suitable for use in industrial control, power switching, and high-voltage amplification circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-213AA, TO-66-2 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 200µA, 1.2mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-66 (TO-213AA) |
| Current - Collector (Ic) (Max) | 7 A |
| Voltage - Collector Emitter Breakdown (Max) | 350 V |
| Power - Max | 45 W |