2N6063
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology's 2N6063 is a high-power PNP bipolar junction transistor (BJT) designed for robust performance in demanding applications. Featuring a collector-emitter breakdown voltage of 100 V and a continuous collector current capability of 50 A, this component is rated for a maximum power dissipation of 150 W. The 2N6063 utilizes a stud mount package, specifically TO-63, ensuring efficient thermal management for high-power operation. Its operating temperature range spans from -65°C to 200°C (junction temperature), making it suitable for use in industrial power control, automotive systems, and power supply applications where reliability under stress is paramount. The robust construction and specifications of the 2N6063 position it as a foundational component for power handling in various electronic systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-211MB, TO-63-4, Stud |
| Mounting Type | Stud Mount |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-63 |
| Current - Collector (Ic) (Max) | 50 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 150 W |
Request a Quote
Clients Also Buy
2N3765
PNP TRANSISTOR
JANTXV2N4449
TRANS NPN 20V TO46
JANTX2N6058
TRANS NPN DARL 80V 12A TO3
