2N6062
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology's 2N6062 is a high-power PNP bipolar junction transistor (BJT) designed for demanding applications. This stud-mount device, housed in a TO-63 package, offers a continuous collector current (Ic) capability of up to 50 A and a maximum collector-emitter breakdown voltage (Vceo) of 100 V. With a power dissipation rating of 150 W, the 2N6062 is suitable for power switching and amplification circuits in industrial control, power supply regulation, and motor drive systems. Its robust construction and high current handling make it a reliable choice for robust power management solutions.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-211MB, TO-63-4, Stud |
| Mounting Type | Stud Mount |
| Transistor Type | PNP |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-63 |
| Current - Collector (Ic) (Max) | 50 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 150 W |
Request a Quote
Clients Also Buy
2N5581
TRANS NPN 50V 0.8A TO46
JAN2N5339U3
TRANS NPN 100V 5A U-3
JANSM2N3637
RH SMALL-SIGNAL BJT
