2N6061
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology's 2N6061 is a PNP bipolar junction transistor (BJT) designed for high-power applications. Featuring a 100 V collector-emitter breakdown voltage and a maximum collector current of 50 A, this device offers a substantial power dissipation capability of 262 W. Its stud mount packaging, specifically the TO-63 case, ensures robust thermal management for demanding operating conditions, with an operating junction temperature range of -65°C to 200°C. This component is suitable for power switching and amplification circuits in industrial and high-reliability applications where robust performance and thermal stability are critical.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-211MB, TO-63-4, Stud |
| Mounting Type | Stud Mount |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-63 |
| Current - Collector (Ic) (Max) | 50 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 262 W |
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