2N6060
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N6060 is a high-power PNP bipolar junction transistor (BJT). This component is designed for demanding applications requiring robust current handling and voltage capability. It features a maximum collector current (Ic) of 50 A and a collector-emitter breakdown voltage (Vce) of 100 V. With a substantial power dissipation rating of 262 W, the 2N6060 is suitable for power switching and amplification circuits. The transistor is housed in a TO-63 stud mount package, facilitating efficient thermal management in high-power designs. This device finds application in power supplies, motor control, and industrial automation systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-211MB, TO-63-4, Stud |
| Mounting Type | Stud Mount |
| Transistor Type | PNP |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-63 |
| Current - Collector (Ic) (Max) | 50 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 262 W |
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