2N6050
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N6050 is a PNP Darlington bipolar junction transistor designed for high-power applications. This through-hole component, housed in a TO-204AA (TO-3) package, offers a collector current of up to 12A and a continuous collector current cutoff of 1mA. It features a significant DC current gain (hFE) of a minimum of 750 at 6A and 3V, and a Vce saturation of 2V at 24mA and 6A. With a maximum collector emitter breakdown voltage of 60V and a power dissipation of 150W, the 2N6050 is suitable for demanding power control and amplification circuits. Its operating temperature range spans from -65°C to 200°C. This device finds application in industrial power supplies, motor control, and audio amplification systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP - Darlington |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 24mA, 6A |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 6A, 3V |
| Frequency - Transition | - |
| Supplier Device Package | TO-204AA (TO-3) |
| Current - Collector (Ic) (Max) | 12 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 150 W |
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