2N6047
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology's 2N6047 is a high-power PNP bipolar junction transistor (BJT) designed for demanding applications. This component features a 100V collector-emitter breakdown voltage and a maximum collector current of 20A, with a significant power dissipation capability of 114W. The 2N6047 utilizes a stud mount configuration, specifically the TO-63 package, facilitating robust thermal management. Its operating temperature range extends from -65°C to 200°C (TJ), making it suitable for environments where reliable power handling is critical. Industries relying on this robust transistor include industrial power control, automotive systems, and high-fidelity audio amplification.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-211MB, TO-63-4, Stud |
| Mounting Type | Stud Mount |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-63 |
| Current - Collector (Ic) (Max) | 20 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 114 W |
Request a Quote
Clients Also Buy
JANTX2N2219A
TRANS NPN 50V 0.8A TO39
2N5632
POWER BJT
MVR2N2222AUBC/TR
RH SMALL-SIGNAL BJT
