2N6046
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology's 2N6046 is an NPN bipolar junction transistor (BJT) designed for high-power applications. Featuring a collector-emitter breakdown voltage of 60 V and a continuous collector current capability of 20 A, this device offers a maximum power dissipation of 114 W. The 2N6046 is housed in a TO-63 stud mount package, facilitating robust thermal management. Its operating temperature range extends from -65°C to 200°C (TJ), making it suitable for demanding environments. This component is commonly utilized in power switching and amplification circuits across various industrial sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-211MB, TO-63-4, Stud |
| Mounting Type | Stud Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-63 |
| Current - Collector (Ic) (Max) | 20 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 114 W |
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