2N6031
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology 2N6031 is a power bipolar junction transistor (BJT) featuring a PNP configuration. This through-hole device, packaged in a TO-204AD (TO-3) metal can, offers a maximum collector-emitter breakdown voltage (Vceo) of 140 V and a continuous collector current (Ic) capability of 16 A. With a power dissipation rating of 200 W, the 2N6031 is suitable for high-power switching and amplification applications. Its robust construction and electrical characteristics make it a reliable component for use in industrial power control, automotive systems, and power supply circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-204AD (TO-3) |
| Current - Collector (Ic) (Max) | 16 A |
| Voltage - Collector Emitter Breakdown (Max) | 140 V |
| Power - Max | 200 W |
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