2N6029
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology's 2N6029 is a high-power PNP bipolar junction transistor (BJT) housed in a TO-204AD (TO-3) package. This through-hole component is rated for a collector-emitter breakdown voltage of 100 V and a continuous collector current of up to 16 A, with a maximum power dissipation of 200 W. Its robust construction and electrical characteristics make it suitable for demanding applications in industrial power control, audio amplification, and high-current switching circuits. The operating temperature range extends from -65°C to 200°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-204AD (TO-3) |
| Current - Collector (Ic) (Max) | 16 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 200 W |
Request a Quote
Clients Also Buy
2N3440U4
TRANS NPN 250V 1A U4
2N1717S
NPN TRANSISTOR
JANTXV2N6649
TRANS PNP DARL 60V 10A TO204AA
