2N5970
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology's 2N5970 is an NPN bipolar junction transistor (BJT) designed for high-power applications. This through-hole component, packaged in a TO-204AD (TO-3) metal can, boasts a maximum collector current of 15 A and a collector-emitter breakdown voltage of 80 V. With a maximum power dissipation of 85 W, it is suitable for demanding power switching and amplification tasks. The 2N5970 is utilized in industrial and power supply applications where robust performance and thermal management are critical. The operating junction temperature range is -65°C to 200°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-204AD (TO-3) |
| Current - Collector (Ic) (Max) | 15 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 85 W |
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