2N5968
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology's 2N5968 is a high-power PNP bipolar junction transistor (BJT) designed for demanding applications. This device features a 100 V collector-emitter breakdown voltage and a maximum continuous collector current of 40 A, with a substantial power dissipation rating of 220 W. The 2N5968 is housed in a TO-63 Stud Mount package, facilitating efficient thermal management. Its robust construction and performance characteristics make it suitable for power switching and amplification circuits in industrial power supplies, motor control systems, and audio power output stages. The TO-211MB, TO-63-4 package designation further specifies its stud mount configuration.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-211MB, TO-63-4, Stud |
| Mounting Type | Stud Mount |
| Transistor Type | PNP |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-63 |
| Current - Collector (Ic) (Max) | 40 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 220 W |
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