2N5967
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N5967 is a high-power PNP bipolar junction transistor (BJT) designed for demanding applications. This stud-mount device, packaged in a TO-211MB/TO-63-4 configuration, features a maximum collector emitter breakdown voltage of 100 V and a continuous collector current capability of up to 40 A. With a substantial power dissipation rating of 220 W, the 2N5967 is suitable for power switching and amplification circuits. Its robust construction and wide operating temperature range of -65°C to 200°C (TJ) make it a reliable choice for industrial power supplies, motor control systems, and high-current switching applications where robust performance is critical.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-211MB, TO-63-4, Stud |
| Mounting Type | Stud Mount |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-63 |
| Current - Collector (Ic) (Max) | 40 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 220 W |
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