2N5966
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N5966 is a high-power PNP bipolar junction transistor (BJT) designed for demanding applications. This component offers a substantial collector current capability of 40 A and a maximum power dissipation of 220 W, making it suitable for power switching and amplification circuits. Featuring a robust TO-63 stud mount package (TO-211MB, TO-63-4), it ensures efficient thermal management. The device boasts a collector-emitter breakdown voltage of 100 V. The 2N5966 is utilized in industries requiring reliable power handling, such as industrial control systems and power supplies. This transistor is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-211MB, TO-63-4, Stud |
| Mounting Type | Stud Mount |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-63 |
| Current - Collector (Ic) (Max) | 40 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 220 W |
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