2N5959
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N5959 is a PNP bipolar junction transistor (BJT) designed for high-power applications. This stud-mount device, housed in a TO-61 package, offers a 100 V collector-emitter breakdown voltage and a maximum collector current of 20 A. With a substantial power dissipation rating of 175 W, it is suitable for demanding power switching and amplification tasks. The operating temperature range extends from -65°C to 200°C, ensuring reliability in harsh environments. This component is frequently utilized in industrial power control, automotive applications, and high-fidelity audio amplification systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-211MA, TO-210AC, TO-61-4, Stud |
| Mounting Type | Stud Mount |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-61 |
| Current - Collector (Ic) (Max) | 20 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 175 W |
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