2N5957
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N5957 is a high-power PNP bipolar junction transistor (BJT) designed for demanding applications. This device features a 100 V collector-emitter breakdown voltage and a maximum continuous collector current of 20 A, with a power dissipation capability of 175 W. The 2N5957 is presented in a TO-61 stud mount package, facilitating robust thermal management and reliable performance in power switching and amplification circuits. Its construction is suitable for industrial control systems, power supplies, and motor drive applications where significant current handling and voltage blocking are essential.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-211MA, TO-210AC, TO-61-4, Stud |
| Mounting Type | Stud Mount |
| Transistor Type | PNP |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-61 |
| Current - Collector (Ic) (Max) | 20 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 175 W |
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