2N5936
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology's 2N5936 is a high-power NPN bipolar junction transistor (BJT) designed for demanding applications. This through-hole component, housed in a TO-204AD (TO-3) package, offers a robust 120V collector-emitter breakdown voltage and a substantial 30A continuous collector current capability. With a maximum power dissipation of 175W, the 2N5936 is suitable for power switching and amplification circuits within industrial control, automotive systems, and power supply designs. Its TO-3 packaging facilitates efficient heat dissipation, crucial for sustained high-power operation.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-204AD (TO-3) |
| Current - Collector (Ic) (Max) | 30 A |
| Voltage - Collector Emitter Breakdown (Max) | 120 V |
| Power - Max | 175 W |