2N5935
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N5935 is a high-power NPN bipolar junction transistor (BJT) designed for robust performance in demanding applications. This through-hole component features a TO-204AD (TO-3) package, facilitating efficient thermal management with a maximum power dissipation of 175 W. The 2N5935 offers a collector-emitter breakdown voltage of 80 V and can handle a continuous collector current of up to 30 A. Its operating temperature range extends from -65°C to 200°C (TJ), making it suitable for use in industrial power control, automotive systems, and high-fidelity audio amplification.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-204AD (TO-3) |
| Current - Collector (Ic) (Max) | 30 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 175 W |