2N5854
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology's 2N5854 is a high-power PNP bipolar junction transistor (BJT) designed for robust performance in demanding applications. Featuring a collector current capability of 10A and a maximum power dissipation of 115W, this component is ideal for power switching and amplification tasks. The 2N5854 offers a collector-emitter breakdown voltage of 80V, ensuring reliable operation under significant voltage stress. Its stud mount configuration, compatible with TO-61 packaging, facilitates efficient thermal management through direct heatsink attachment. This transistor finds utility in industrial motor control, power supply regulation, and audio amplification circuits where high current handling and power capability are paramount.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-211MA, TO-210AC, TO-61-4, Stud |
| Mounting Type | Stud Mount |
| Transistor Type | PNP |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-61 |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 115 W |
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