2N5853
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N5853 is a PNP bipolar junction transistor (BJT) designed for high-power applications. This component features a robust 80 V collector-emitter breakdown voltage and a maximum collector current of 10 A, supported by a substantial 115 W power dissipation capability. The 2N5853 utilizes a stud mount configuration, with package options including TO-61, TO-211MA, and TO-210AC, facilitating efficient thermal management. Its wide operating temperature range of -65°C to 200°C makes it suitable for demanding environments. This power BJT is commonly employed in power switching, amplification, and linear regulation circuits across industrial, automotive, and consumer electronics sectors where reliable high-current handling is critical.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-211MA, TO-210AC, TO-61-4, Stud |
| Mounting Type | Stud Mount |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-61 |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 115 W |
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