2N5760
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N5760 is an NPN bipolar junction transistor (BJT) designed for high-power applications. This through-hole component, housed in a TO-204AA (TO-3) package, offers a maximum collector-emitter breakdown voltage of 140 V and can handle a continuous collector current of up to 6 A. With a maximum power dissipation of 150 W, the 2N5760 is suitable for demanding power switching and amplification circuits. Its robust construction and operating temperature range of -65°C to 200°C make it a reliable choice for industrial power control, audio amplification, and general power supply designs.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-204AD (TO-3) |
| Current - Collector (Ic) (Max) | 6 A |
| Voltage - Collector Emitter Breakdown (Max) | 140 V |
| Power - Max | 150 W |
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