2N5759
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology's 2N5759 is a high-power PNP bipolar junction transistor (BJT) designed for demanding applications. This through-hole component features a TO-204AD (TO-3) package, facilitating efficient thermal management for its 150 W power dissipation capability. With a maximum collector current of 6 A and a collector-emitter breakdown voltage of 120 V, the 2N5759 is suitable for power switching and amplification circuits. Its robust construction and established performance characteristics make it a reliable choice for industrial control systems, power supplies, and automotive electronics. The 2N5759 is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-204AD (TO-3) |
| Current - Collector (Ic) (Max) | 6 A |
| Voltage - Collector Emitter Breakdown (Max) | 120 V |
| Power - Max | 150 W |
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