2N5758
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology's 2N5758 is a high-power NPN bipolar junction transistor (BJT). This through-hole component, housed in a TO-204AD (TO-3) package, is rated for a collector-emitter breakdown voltage of 100 V and a continuous collector current of up to 6 A. It offers a maximum power dissipation of 150 W, making it suitable for demanding applications. The 2N5758 is utilized in power switching and amplification circuits across various industrial sectors including power supplies, motor control, and audio amplification.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-204AD (TO-3) |
| Current - Collector (Ic) (Max) | 6 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 150 W |
Request a Quote
Clients Also Buy
JANTX2N2219A
TRANS NPN 50V 0.8A TO39
2N5632
POWER BJT
MVR2N2222AUBC/TR
RH SMALL-SIGNAL BJT
