2N5745
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N5745 is a high-power PNP bipolar junction transistor (BJT) designed for demanding applications. This through-hole component, housed in a TO-204AD (TO-3) package, offers a collector current capability of up to 20A and a collector-emitter breakdown voltage of 80V. It features a maximum power dissipation of 5W and a saturation voltage of 1V at 1A base current and 10A collector current. The device exhibits a minimum DC current gain (hFE) of 15 at 10A collector current and 2V collector-emitter voltage, with a collector cutoff current of 100µA. Operating across a wide temperature range from -55°C to 200°C (TJ), the 2N5745 is suitable for power switching and amplification circuits in industrial and automotive sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 1A, 10A |
| Current - Collector Cutoff (Max) | 100µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 10A, 2V |
| Frequency - Transition | - |
| Supplier Device Package | TO-204AD (TO-3) |
| Current - Collector (Ic) (Max) | 20 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 5 W |
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