2N5744
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology 2N5744 is a robust PNP bipolar junction transistor (BJT) designed for demanding power applications. This through-hole component, packaged in a TO-66 (TO-213AA) metal can, offers a collector-emitter breakdown voltage of 100 V and a continuous collector current capability of 20 A. With a maximum power dissipation of 43.7 W, the 2N5744 is suitable for power switching and amplification circuits across various industrial sectors, including power supplies, motor control, and audio amplification. Its construction facilitates efficient thermal management in high-power environments.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-213AA, TO-66-2 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-66 (TO-213AA) |
| Current - Collector (Ic) (Max) | 20 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 43.7 W |
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