2N5743
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology's 2N5743 is a high-power PNP bipolar junction transistor (BJT) designed for robust performance. This through-hole device, housed in a TO-66 (TO-213AA) package, offers a maximum collector emitter breakdown voltage of 60V and supports a continuous collector current of up to 20A. With a power dissipation capability of 43W, the 2N5743 is suitable for demanding applications in power switching and amplification. Its operating temperature range extends from -65°C to 200°C (TJ), ensuring reliability in challenging environments. This component finds utility in industrial power control, automotive electronics, and general-purpose power amplification circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-213AA, TO-66-2 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-66 (TO-213AA) |
| Current - Collector (Ic) (Max) | 20 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 43 W |
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