2N5742
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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The Microchip Technology 2N5742 is a high-power PNP bipolar junction transistor (BJT) designed for demanding applications. This component features a robust TO-204AD (TO-3) package, facilitating efficient heat dissipation with a maximum power rating of 113 W. It can handle a continuous collector current of up to 20 A and offers a collector-emitter breakdown voltage of 100 V. The transistor exhibits a saturation voltage of 1.5V at 1mA base current and 10mA collector current. Its operating junction temperature range is from -65°C to 200°C, making it suitable for operation in harsh environmental conditions. This device finds application in power supply regulation, audio amplification, and general-purpose switching circuits across various industrial sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-204AD (TO-3) |
| Current - Collector (Ic) (Max) | 20 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 113 W |
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