2N5741
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N5741 is a high-power PNP bipolar junction transistor (BJT) designed for robust performance in demanding applications. This component features a collector current rating of 20A and a maximum power dissipation of 113W, making it suitable for power switching and amplification tasks. The device operates with a collector-emitter breakdown voltage of up to 60V. Packaged in a TO-204AD (TO-3) through-hole configuration, it offers reliable thermal management. The 2N5741 is commonly employed in industrial power control, audio amplification, and automotive systems where efficient power handling is critical.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-204AD (TO-3) |
| Current - Collector (Ic) (Max) | 20 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 113 W |
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