2N5739
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N5739 is a PNP bipolar junction transistor (BJT) designed for high-power applications. This through-hole component, housed in a TO-66 (TO-213AA) package, offers a 60V collector-emitter breakdown voltage and can handle up to 10A of continuous collector current. With a maximum power dissipation of 35W, the 2N5739 is suitable for use in power switching and linear amplification circuits across various industrial sectors. Its robust construction and electrical characteristics make it a reliable choice for demanding electronic designs.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-213AA, TO-66-2 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-66 (TO-213AA) |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 35 W |
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