2N5733
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology's 2N5733 is a high-power NPN bipolar junction transistor (BJT) designed for demanding applications. This component features a robust 80 V collector-emitter breakdown voltage and a significant 30 A continuous collector current capability, supporting up to 150 W of power dissipation. The 2N5733 is housed in a TO-63 stud mount package, facilitating efficient thermal management in high-power environments. Its construction is suitable for use in industrial motor control, power supply regulation, and audio amplification systems where reliable power handling is critical. The operating temperature range of -65°C to 200°C ensures performance across a broad spectrum of environmental conditions.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-211MB, TO-63-4, Stud |
| Mounting Type | Stud Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-63 |
| Current - Collector (Ic) (Max) | 30 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 150 W |
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