2N5732
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N5732 is an NPN bipolar junction transistor (BJT) designed for robust power applications. This through-hole component, housed in a TO-204AD (TO-3) package, offers a maximum collector-emitter breakdown voltage of 80 V and can handle a continuous collector current of up to 20 A, with a maximum power dissipation of 75 W. Its construction is suitable for demanding environments and applications requiring high current and voltage handling capabilities, commonly found in power supply circuits, audio amplifiers, and general-purpose switching applications. The device is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-204AD (TO-3) |
| Current - Collector (Ic) (Max) | 20 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 75 W |
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