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2N5685

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2N5685

NPN TRANSISTOR

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

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Microchip Technology's 2N5685 is a high-power NPN bipolar junction transistor (BJT) designed for demanding applications. This robust component features a 60V collector-emitter breakdown voltage and a continuous collector current capability of up to 50A, with a maximum power dissipation of 300W. The 2N5685 is housed in a reliable TO-204AD (TO-3) package, facilitating efficient thermal management through its through-hole mounting. It exhibits a minimum DC current gain (hFE) of 30 at 5mA and 2V. The Vce saturation is rated at a maximum of 5V at 10A collector current and 50A. This transistor is suitable for use in power switching, linear regulation, and high-current amplification circuits across various industrial and high-reliability sectors.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-204AA, TO-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic5V @ 10A, 50A
Current - Collector Cutoff (Max)500µA
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 5mA, 2V
Frequency - Transition-
Supplier Device PackageTO-204AD (TO-3)
Current - Collector (Ic) (Max)50 A
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max300 W

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