2N5678
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology's 2N5678 is a high-power PNP bipolar junction transistor (BJT) designed for robust power switching and amplification applications. This stud-mount device, housed in a TO-63 package, offers a maximum collector current of 10 A and a power dissipation capability of 175 W, making it suitable for demanding industrial control, power supply, and motor drive circuits. With a collector-emitter breakdown voltage of 100 V, the 2N5678 provides ample voltage headroom for various power conversion topologies. Its robust construction ensures reliable performance in challenging operating environments.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-211MB, TO-63-4, Stud |
| Mounting Type | Stud Mount |
| Transistor Type | PNP |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-63 |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 175 W |
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