2N5677
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology's 2N5677 is a high-power PNP bipolar junction transistor (BJT) designed for demanding applications. This component features a 100 V collector-emitter breakdown voltage and can handle a continuous collector current of up to 5 A. With a maximum power dissipation of 87.5 W, it is suitable for robust power switching and amplification tasks. The 2N5677 utilizes a stud mount configuration, commonly associated with the TO-61 package, facilitating efficient thermal management. This device finds application in various industrial sectors requiring reliable power control and amplification.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-211MA, TO-210AC, TO-61-4, Stud |
| Mounting Type | Stud Mount |
| Transistor Type | PNP |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-61 |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 87.5 W |
Request a Quote
Clients Also Buy
JAN2N5339U3
TRANS NPN 100V 5A U-3
JAN2N3735
TRANS NPN 40V 1.5A TO39
2N5729
POWER BJT
