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2N5672

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2N5672

TRANS NPN 120V 30A TO3

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

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Microchip Technology's 2N5672 is a high-power NPN bipolar junction transistor housed in a TO-3 (TO-204AA) package. This device offers a collector-emitter breakdown voltage of 120V and a continuous collector current capability of up to 30A, with a maximum power dissipation of 6W. Key electrical parameters include a saturation voltage (Vce(sat)) of 5V at 6A collector current and 30A base current, and a minimum DC current gain (hFE) of 20 at 20A collector current and 5V collector-emitter voltage. The 2N5672 is designed for through-hole mounting and operates across a wide temperature range of -65°C to 200°C. This component finds application in power switching and amplification circuits within industrial and power supply sectors.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-204AA, TO-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic5V @ 6A, 30A
Current - Collector Cutoff (Max)10mA
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 20A, 5V
Frequency - Transition-
Supplier Device PackageTO-3
Current - Collector (Ic) (Max)30 A
Voltage - Collector Emitter Breakdown (Max)120 V
Power - Max6 W

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