2N5665
TRANS NPN 300V 5A TO66Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology's 2N5665 is an NPN bipolar junction transistor designed for high voltage applications. This through-hole component, housed in a TO-66 (TO-213AA) package, offers a maximum collector-emitter breakdown voltage of 300V and a continuous collector current capability of 5A. It exhibits a minimum DC current gain (hFE) of 25 at 1A collector current and 5V collector-emitter voltage. The device features a maximum collector-emitter saturation voltage of 1V at 1A base current and 5A collector current. With a maximum power dissipation of 2.5W, the 2N5665 operates across a junction temperature range of -65°C to 200°C. This component is suitable for use in power supply circuits, switching applications, and general-purpose amplification within industrial and consumer electronics.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-213AA, TO-66-2 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 1A, 5A |
| Current - Collector Cutoff (Max) | 200nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 1A, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-66 (TO-213AA) |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
| Power - Max | 2.5 W |
Request a Quote
Clients Also Buy
JANSM2N2222AUB
RH SMALL-SIGNAL BJT
BCY59-V111-HQ
SMALL-SIGNAL BJT
2N6286
TRANS PNP DARL 80V 20A TO204AA
